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| SMD Type Silicon Epitaxial Planar Diode 1SV304 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C1V/C4V=3.0(Typ.) Low Series Resistance:rs=0.27 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Absolute Maxim um Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR Tj Tstg Value 10 125 -55 to +125 Unit V Electrical C haracteristics T a = 25 P aram eter Reverse V oltage Reverse Current Capacitance Capacitance Ratio S eries Resistance S ym bol VR IR C1V C4V C1V/C4V rs V R = 1V , f = 470 M Hz Conditions IR = 1 A M in 10 3 17.3 5.3 2.8 18.3 6.1 3 0.27 0.32 19.3 6.6 Typ M ax Unit V nA pF V R = 10 V f = 1 M Hz;V R = 1 V f = 1 M Hz;V R = 4 V Marking Marking TV +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1 |
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